Faster than ever with 4800MHz frequency
The TEAMGROUP ELITE SO-DIMM DDR5 is equipped with an ultra-high frequency of 4800MHz, a standard for DDR5s and 50% more from the 3200MHz standard frequency maximum of DDR4 modules.
Conserve energy with energy-efficient 1.1V working voltage
Standard working voltage has been reduced from the 1.2V in DDR4 modules to 1.1V for better battery life on laptops. The PMIC has also been transferred from the motherboard to the RAM for effective load management and minimal noise interference.
Supports on-die ECC for more stable systems
The TEAMGROUP ELITE SO-DIMM DDR5 supports on-die ECCs, a feature that self-corrects DRAM cells, to deliver stability to DRAM systems using DDR5.
New structural composition for better performance
DDR5 allows up to 32 banks (storage units that can be enabled/disabled separately) comprised from 8 bank groups, doubling the access availability from the 16 banks available in DDR4 standards; the DDR5 burst length (amount of data that can be accessed from a single DRAM read/write command) is also twice as much as DDR4 burst lengths. We believe the strengthened DDR5 performance can ensure that our users enjoy a brand-new experience.
Upgraded capacity for powerful multitasking
The TEAMGROUP ELITE SO-DIMM DDR5 is available with 8GB, 16GB, and 32GB capacities to satisfy the multitasking needs of businessmen, ensuring that users can work on documents and watch videos at the same time for the ultimate smooth multitasking experience.
SPECIFICATIONS:
Module Type:
ELITE DDR5 LAPTOP MEMORY
Capacity:
8GB(1x8GB)
Frequency:
4800MHz
Latency:
CL40
Data Transfer Bandwidth:
44800 MB/s
Voltage:
1.1V
Compatibility:
Intel 13th Laptop
Team P/N:
TED58G4800C40D-S016
Feature
Faster than ever with 4800MHz frequency
New structural composition for better performance
Conserve energy with energy-efficient 1.1V working voltage
Supports on-die ECC for more stable systems
Upgraded capacity for powerful multitasking
Faster than ever with 4800MHz frequency
The TEAMGROUP ELITE SO-DIMM DDR5 is equipped with an ultra-high frequency of 4800MHz, a standard for DDR5s and 50% more from the 3200MHz standard frequency maximum of DDR4 modules.
Conserve energy with energy-efficient 1.1V working voltage
Standard working voltage has been reduced from the 1.2V in DDR4 modules to 1.1V for better battery life on laptops. The PMIC has also been transferred from the motherboard to the RAM for effective load management and minimal noise interference.
Supports on-die ECC for more stable systems
The TEAMGROUP ELITE SO-DIMM DDR5 supports on-die ECCs, a feature that self-corrects DRAM cells, to deliver stability to DRAM systems using DDR5.
New structural composition for better performance
DDR5 allows up to 32 banks (storage units that can be enabled/disabled separately) comprised from 8 bank groups, doubling the access availability from the 16 banks available in DDR4 standards; the DDR5 burst length (amount of data that can be accessed from a single DRAM read/write command) is also twice as much as DDR4 burst lengths. We believe the strengthened DDR5 performance can ensure that our users enjoy a brand new experience.
Upgraded capacity for powerful multitasking
The TEAMGROUP ELITE SO-DIMM DDR5 is available with 8GB, 16GB, and 32GB capacities to satisfy the multitasking needs of businessmen, ensuring that users can work on documents and watch videos at the same time for the ultimate smooth multitasking experience.
SPECIFICATIONS
Module Type:
ELITE DDR5 LAPTOP MEMORY
Capacity:
16GB(1x16GB)
Frequency:
4800MHz
Latency:
CL40
Data Transfer Bandwidth:
38400 MB/s
Voltage:
1.1V
Compatibility:
Intel 13th Laptop
Team P/N:
TED516G4800C40D-S01
Value RAM's KVR32S22S8/8 is a 1G x 64-bit (8GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM), 1Rx8, non-ECC, memory module, based on eight 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. This 260-pin DIMM uses gold contact fingers.
FEATURES :
• Power Supply: VDD =
1.2V Typical
• VDDQ =
1.2V Typical
• VPP =
2.5V Typical
• VDDSPD =
2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB:
Height 1.18” (30.00mm)
• RoHS Compliant and Halogen-Free
CL(IDD)
22 cycles
Row Cycle Time (tRCmin)
45.75ns(min.)
Refresh to Active/RefreshCommand Time (tRFCmin)
350ns(min.)
Row Active Time (tRASmin)
32ns(min.)
UL Rating
94 V - 0
Operating Temperature
0C to +85C
Storage Temperature
-55C to +100C
SPECIFICATION
CL(IDD):
22 cycles
Row Cycle Time (tRCmin):
45.75ns(min.)
Refresh to Active/Refresh Command Time (tRFCmin):
350ns(min.)
Row Active Time (tRASmin):
32ns(min.)
UL Rating:
94 V - 0
Operating Temperature:
0o C to +85o C
Storage Temperature:
-55o C to +100o C
ValueRAM's KVR32S22D8/16 is a 2G x 64-bit (16GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM), 2Rx8, non-ECC, memory module, based on sixteen 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22 22-22 at 1.2V. This 260-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
Feature
Specification
Power Supply
VDD = 1.2V Typical
VDDQ
1.2V Typical
VPP
2.5V Typical
VDDSPD
2.2V to 3.6V
On-Die Termination
Nominal and dynamic ODT for data, strobe, and mask signals
Low-Power Mode
Auto self refresh (LPASR)
Data Bus
Data bus inversion (DBI)
On-Die VREFDQ
Generation and calibration
Rank
Dual-rank
SPD
On-board I2 serial presence-detect (EEPROM)
Internal Banks
16 internal ban
Specification
Details
Capacity
8GB
Memory Type
DDR5
Form Factor
SODIMM
Speed
5600 MT/s
Latency
CL40
Voltage
1.1V
XMP
Yes (Intel XMP 3.0 support)
Dimensions
67.6mm x 6.4mm x 30mm
Warranty
Lifetime
Features
Dual rank, unbuffered, energy-efficient for laptops and small PCs
DDR4 3200MT/s* Non-ECC Unbuffered SODIMM
Feature
Specification
Power Supply
VDD = 1.2V Typical
VDDQ
1.2V Typical
VPP
2.5V Typical
VDDSPD
2.2V to 3.6V
On-die Termination (ODT)
Nominal and dynamic for data, strobe, and mask signals
Low-power Auto Self Refresh (LPASR)
Supported
Data Bus Inversion (DBI)
Supported for data bus
On-die VREFDQ
Generation and calibration
Rank
Dual-rank
SPD EEPROM
On-board I2 serial presence-detect
Internal Banks
16 banks; 4 groups of 4 banks each
Burst Settings
Fixed BC4, BL8 via MRS; selectable BC4 or BL8 on-the-fly
Topology
Fly-by
Control/Address Bus
