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β±3,186.00
NVMe PCIe Gen3x4 interface: Provides lightning-fast data transfer speeds, significantly improving system responsiveness and application performance.
High-performance controller: Equipped with a powerful controller to optimize data processing and minimize latency.
3D NAND flash: Utilizes advanced 3D NAND flash technology for enhanced performance, endurance, and reliability.
DRAM cache: Features a built-in DRAM cache for faster data access and improved overall performance.
Low-power consumption: Designed to operate efficiently with minimal power consumption, reducing heat and extending battery life.
Compact M.2 form factor: Fits easily into a wide range of devices, including laptops, desktops, and gaming consoles.
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| Category | Specification |
|---|---|
| Model | TS512GMTE112S |
| Capacity | 512GB |
| Interface | NVMe PCIe Gen3 x4 |
| Form Factor | M.2 2280 |
| Sequential Read Speed | Up to 3400 MB/s |
| Sequential Write Speed | Up to 3000 MB/s |
| 4K Random Read | Up to 400,000 IOPS |
| 4K Random Write | Up to 280,000 IOPS |
| Endurance (TBW) | 1200 TBW |
| NAND Type | 3D NAND Flash |
| Controller | High-performance controller |
| Cache | DRAM Cache |
| Power Consumption | Low power consumption |
| Additional Features | Compact M.2 form factor, high durability, fast performance |
β±3,186.00
Estimated delivery between April 13 and April 15.
Delivery Information
Metro Manila: 2β3 days | Provincial: 3β7 days
Main Office Branch only
Same Day Delivery
Same-Day Delivery Available
Processing starts 1β2 hours after checkout MonβSat | Main Office Branch only
Processing only during office hours from Main Office 9am - 5pm
β±3,186.00
β±3,186.00
Authorized Seller
100% Original Authentic Product
NVMe PCIe Gen3x4 interface: Provides lightning-fast data transfer speeds, significantly improving system responsiveness and application performance.
High-performance controller: Equipped with a powerful controller to optimize data processing and minimize latency.
3D NAND flash: Utilizes advanced 3D NAND flash technology for enhanced performance, endurance, and reliability.
DRAM cache: Features a built-in DRAM cache for faster data access and improved overall performance.
Low-power consumption: Designed to operate efficiently with minimal power consumption, reducing heat and extending battery life.
Compact M.2 form factor: Fits easily into a wide range of devices, including laptops, desktops, and gaming consoles.
Β
Β
| Category | Specification |
|---|---|
| Model | TS512GMTE112S |
| Capacity | 512GB |
| Interface | NVMe PCIe Gen3 x4 |
| Form Factor | M.2 2280 |
| Sequential Read Speed | Up to 3400 MB/s |
| Sequential Write Speed | Up to 3000 MB/s |
| 4K Random Read | Up to 400,000 IOPS |
| 4K Random Write | Up to 280,000 IOPS |
| Endurance (TBW) | 1200 TBW |
| NAND Type | 3D NAND Flash |
| Controller | High-performance controller |
| Cache | DRAM Cache |
| Power Consumption | Low power consumption |
| Additional Features | Compact M.2 form factor, high durability, fast performance |
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