2.5” SSD/HDD Enclosure Kit
What do you do with the old hard drive removed from your laptop? Don't throw it away, reuse it! Transcend's 2.5” SSD/HDD Enclosure Kit comes with all the tools you need to reuse the 2.5-inch hard drive removed from your notebook. Follow the step-by-step installation guide to find useful tips and assembly instructions. The kit also features a one-touch backup function, so download the Transcend Elite software from our website to better manage your data!
Category
Specification
Appearance - Dimensions
129.5 mm x 80.8 mm x 18.8 mm (5.10" x 3.18" x 0.74")
Appearance - Weight
108 g (3.8 oz)
Interface - USB Type
micro USB to USB Type-A
Interface - Connection Interface
USB 3.1 Gen 1 (USB 5Gbps)
Interface - Bus Interface
SATA III 6Gb/s
Operating Environment - Temperature
0°C (32°F) ~ 70°C (158°F)
Operating Environment - Voltage
5V
Note
Requires Transcend 2.5” SATA III SSD and Elite software for One Touch Auto-backup; Supports 2.5" HDD/SSD up to 9.5 mm height
Package Contents
Enclosure / USB Cable / 7mm to 9.5mm Spacer / PH1 Screwdriver / M2 Mounting Screws
Form Factor: M.2 2280
Interface: PCI-Express 4.0x4, NVMe 1.3
Total Capacity: 2000GB*
Sequential Read Speed : up to 5000 MB/s**
Sequential Write speed : up to 4400 MB/s**
Wear Leveling, Over-Provision technologies
TRIM & S.M.A.R.T supported
Fully Body Copper Heat Spreader
World First PCIe 4.0x4 Controller
The World First PCIe 4.0x4 Controller, Phison PS5016-E16 controller, made by 28nm manufacturing technology. The advanced fabrication process ensures PS5016-E16 has enough compute power for ECC processing when adopting the latest 3D TLC NAND flash. PS5016-E16 also features eight NAND channels with 32 CE targets, DDR4 DRAM caching, and a PCIe 4.0x4 interface. As for features, the chip supports the NVMe 1.3 protocol, LDPC error correction, and Wear Leveling, Over-Provision technologies to improve reliability and durability of SSDs.
NAND Flash Selected for High Quality and Performance
TOSHIBA BiCS4 96 Layers 3D TLC (800MT/s)
Toshiba BiCS4 NAND Flash optimizes circuitry and architecture by increasing to 96 layers for higher storage space per unit area. 800MT/s throughput on the AORUS NVMe Gen 4 SSD far exceeds that of PCIe 3.0x4 devices for superior storage performance.
Specification
Details
Memory Type
DDR4
Capacity
16GB (8GBx2)
Multi-Channel Kit
Dual Channel Kit
OC Profile Support
Intel XMP 2.0
Tested Speed (Up To) (XMP)
3600 MT/s
Tested Latency (XMP)
18-22-22-42
Tested Voltage (XMP)
1.35V
Registered/Unbuffered
Unbuffered
Error Checking (ECC)
Non-ECC
SPD Speed (Default)
2133 MT/s
SPD Voltage (Default)
1.20V
Fan Included
No
Features
Intel XMP 2.0 (Extreme Memory Profile) Ready
Additional Notes
Do not mix memory kits. Memory kits are matched sets designed to run together.
Prior to enabling XMP, kits boot at SPD speed under default BIOS settings.
Enable XMP/DOCP/A-XMP in BIOS to reach rated speed with compatible hardware.
System stability depends on motherboard and CPU capability.
Usage outside specs may cause instability or damage.
Module height can be found in FAQ.
For support, contact G.SKILL technical support via email.
World First PCIe 4.0x4 Controller
The World First PCIe 4.0x4 Controller, Phison PS5016-E16 controller, made by 28nm manufacturing technology. The advanced fabrication process ensures PS5016-E16 has enough compute power for ECC processing when adopting the latest 3D TLC NAND flash. PS5016-E16 also features eight NAND channels with 32 CE targets, DDR4 DRAM caching, and a PCIe 4.0x4 interface. As for features, the chip supports the NVMe 1.3 protocol, LDPC error correction, and Wear Leveling, Over-Provision technologies to improve reliability and durability of SSDs.
NAND Flash Selected for High Quality and Performance
TOSHIBA BiCS4 96 Layers 3D TLC (800MT/s)
Toshiba BiCS4 NAND Flash optimizes circuitry and architecture by increasing to 96 layers for higher storage space per unit area. 800MT/s throughput on the AORUS NVMe Gen 4 SSD far exceeds that of PCIe 3.0x4 devices for superior storage performance.
Capacity
Model
Sequential Read MB/s
Sequential Write MB/s
Random Read IOPS
Random Write IOPS
500GB
AORUS NVMe Gen4 SSD 500GB (GP-ASM2NE6500GTTD)
5000 MB/s
2500 MB/s
400k
550k
1000GB
AORUS NVMe Gen4 SSD 1TB (GP-ASM2NE6100TTTD)
5000 MB/s
4400 MB/s
750k
700k
2000GB
AORUS NVMe Gen4 SSD 2TB (GP-ASM2NE6200TTTD)
5000 MB/s
4400 MB/s
750k
700k
Key specifications
Interface:
PCIe Gen 3.0 x4, NVMe 1.4
Form Factor:
M.2 (2280)
Capacity:
500GB
Sequential Read Speed:
Up to 3,100 MB/s
Sequential Write Speed:
Up to 2,600 MB/s
Random Read Speed (4KB, QD32):
Up to 400,000 IOPS
Random Write Speed (4KB, QD32):
Up to 470,000 IOPS
Controller:
Samsung "Pablo" Controller
NAND Flash:
Samsung 128-layer 3-bit MLC (TLC) V-NAND
Cache:
DRAM-less, uses Host Memory Buffer (HMB)
Endurance:
300 TBW (Total Bytes Written)
Warranty:
5 years
Encryption:
AES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive (IEEE1667)
Software:
Supports Samsung Magician for drive management
Feature
Description
Upgrade to impressive NVMe® speed
Harness your PC's potential with the 980. Whether you need a boost for gaming or a seamless workflow for heavy graphics, the 980 is a smart choice for outstanding SSD performance — backed by NVMe® interface and PCIe® 3.0 technology.
Keep moving with Full Power Mode
Keep your SSD running at its peak with Full Power Mode, which drives continuous and consistent high performance. Enable through Samsung Magician software to keep your SSD in active mode with no latency, so you can instantly jump back into large intensive work files or graphics-heavy games.
General specifications
Model:
A440 Lite
Capacity:
512GB
Interface:
PCIe Gen4x4 with NVMe
Controller:
Phison PS5027-E27T
NAND Type:
162-layer TLC NAND
DRAM Cache:
None (uses Host-Memory-Buffer (HMB))
Dimensions:
80.0(L)×22.0(W)×3.7(H) mm80.0 open paren cap L close paren cross 22.0 open paren cap W close paren cross 3.7 open paren cap H close paren mm
80.0(𝐿)×22.0(𝑊)×3.7(𝐻) mm
Weight:
7g
Endurance:
300 TBW
Warranty:
5 Years
Performance
Sequential Read:
Up to 7,000 MB/s
Sequential Write:
Up to 4,500 MB/s
Other specs
Shock Resistance:
1,500G/0.5ms
Vibration Resistance:
80Hz~2,000Hz/20G
MTBF:
1,500,000 Hours
Operating Temperature:
0∘C0 raised to the composed with power cap C
0∘𝐶
to
70∘C70 raised to the composed with power cap C
70∘𝐶
Storage Temperature:
-40∘Cnegative 40 raised to the composed with power cap C
−40∘𝐶
to
85∘C85 raised to the composed with power cap C
85∘𝐶
Heat Sink:
Pre-installed ultra-thin graphene heat sink
Ultimate Read/Write Performance
Storage Expandable across Platforms with Ultra-slim Size for Easy Installation
Preset Controller Solution for Optimal Quality
Optimized Performance Offers Reliability and Long Lifespan
S.M.A.R.T. Monitoring System
Be Eco-friendly and Conserve the Earth
Patented Graphene Heat SinkInvention patent number in the US: US11051392B2Invention patent number in Taiwan: I703921Utility model patent number in China: CN 211019739 U
Patented S.M.A.R.T. SoftwareInvention patent number in Taiwan: I751753
SA500 2.5" SSD
High Performance and Cost-Effective SSD Solution
FEATURE
High-speed Interface
With SATAⅢ 6 Gb/s high-speed interface, which can drastically reduce the boot time
Massive Expansion
Provide a variety of capacity options from 120GB-1TB to meet diverse storage needs
Wide Compatibility
It can easily upgrade the machine with wide compatibility for laptops, desktops and integrated computers
SPECIFICATIONS
Brand:
Netac
Model:
SA500
Interface:
2.5 inches SATA III
Capacity:
256GB/512GB/1TB
Seq. Read（MB/s) up to:
520 (256GB)/ 520 (512GB)/ 530 (1TB)
Seq. Write（MB/s）up to:
450 (256GB)/450 (512GB)/ 475 (1TB)
TBW:
120(256GB)/240 (512GB)/480 (1TB)
NAND Flash:
3D TLC/QLC
Operating Temperature:
0℃-70℃
Storage Temperature:
-40℃-85℃
Size:
100 x 69.85 x 7 mm
SA500 2.5" SSD
High Performance and Cost-Effective SSD Solution
FEATURE
High-speed Interface
With SATAⅢ 6 Gb/s high-speed interface, which can drastically reduce the boot time
Massive Expansion
Provide a variety of capacity options from 120GB-1TB to meet diverse storage needs
Wide Compatibility
It can easily upgrade the machine with wide compatibility for laptops, desktops and integrated computers
SPECIFICATIONS
Brand:
Netac
Model:
SA500
Interface:
2.5 inches SATA III
Capacity:
256GB/512GB/1TB
Seq. Read（MB/s) up to:
520 (256GB)/ 520 (512GB)/ 530 (1TB)
Seq. Write（MB/s）up to:
450 (256GB)/450 (512GB)/ 475 (1TB)
TBW:
120(256GB)/240 (512GB)/480 (1TB)
NAND Flash:
3D TLC/QLC
Operating Temperature:
0℃-70℃
Storage Temperature:
-40℃-85℃
Size:
100 x 69.85 x 7 mm
DESCRIPTIONS:
Gen 4x4 NVMe PCIe performance
Upgrade your system with read/write speeds up to 6,000/5,000MB/s.
Ideal for systems with limited space
Easily integrate into designs with M.2 connectors. Perfect for thin laptops and small form factor PCs.
Increased storage space
Available in a variety of high capacities up to 4TB providing ample space to store files, videos, documents, and games with room to spare.
Brand
Kingston
Series
SNV3S500G
SNV3S1000G
SNV3S2000G
Item model number
SNV3S/500G
SNV3S1000G
SNV3S2000G
Item Weight
0.232 ounces
Product Dimensions
3.15 x 0.15 x 0.89 inches
Item Dimensions LxWxH
3.15 x 0.15 x 0.89 inches
Color
blue
Computer Memory Type
DIMM
Flash Memory Size
500 GB
Hard Drive Interface
NVMe
CITY E100 Consumer SSD
CITY E100 2.5'' SATA SSD, set your computer boot in seconds.
3D Stacking Technology
Better Data Safety
High Performance
3D Stacking Technology
3D Nand Further Enhances Capacity, Performance and Stability
Safer Data Protection
Free of Mechanical Structure, Better Electronic Chip Control
SPECIFICATION
Product Size
2.5 inch
Capacity
512GB
Max. Seq. Read (MB/s)
550MB/s
Max. Seq. Write (MB/s)
520MB/s
Max. Ran. 4k read IOPS
65K
Max. Ran. 4K Write IOPS
70k
Max. Power Consumption
2.9W
TBW
240TB
Storage Medium
3D NAND
Interface
SATA III 6Gb/s
MTBF
2,000,000 hours
Operation Temperature
0-70℃
Storage Temperature
-40 °C to 85 °C
Weight
≤ 36.8 g
DRAM Cache Memory
/
TRIM
Supports
Key specifications
Capacity:
256GB
Form Factor:
M.2 2280
Interface:
PCI-Express 3.0 x4, NVMe 1.3
Sequential Read Speed:
Up to 1700 MB/s
Sequential Write Speed:
Up to 1100 MB/s
Random Read IOPS:
Up to 180k
Random Write IOPS:
Up to 250k
Warranty:
Limited 5-year or 300TBW
Features:
Host Memory Buffer (HMB) supported
TRIM and S.M.A.R.T supported
Key specifications
Model:
GP-GSM2NE3512GNTD
Form Factor:
M.2 2280
Interface:
PCI-Express 3.0 x4, NVMe 1.3
Total Capacity:
512GB
NAND Type:
3D TLC NAND Flash
External DDR Cache:
Not available (N/A)
Sequential Read Speed:
Up to 1700 MB/s
Sequential Write Speed:
Up to 1550 MB/s
Random Read IOPS:
Up to 270,000
Random Write IOPS:
Up to 340,000
HMB Support:
Yes
TRIM & SMART Support:
Yes
Mean Time Between Failures (MTBF):
1.5 million hours
Warranty:
Limited 5-year or 800 TBW (Total Bytes Written)
